University of Limerick Institutional Repository

Titanium carbide MXene nucleation layer for epitaxial growth of high-quality GaN nanowires on amorphous substrates

DSpace Repository

Show simple item record

dc.contributor.author Prabaswara, Aditya
dc.contributor.author Kim, Hyunho
dc.contributor.author Min, Jung-Wook
dc.contributor.author Subedi, Ram Chandra
dc.contributor.author Anjum, Dalaver H.
dc.contributor.author Davaasuren, Bambar
dc.contributor.author Moore, Kalani
dc.contributor.author Conroy, Michele A.
dc.contributor.author Mitra, Somak
dc.contributor.author Roqan, Iman S.
dc.contributor.author Ng, Tien Khee
dc.contributor.author Alshareef, Husam N.
dc.contributor.author Ooi, Boon S.
dc.date.accessioned 2021-04-09T13:45:19Z
dc.date.available 2021-04-09T13:45:19Z
dc.date.issued 2020
dc.identifier.uri http://hdl.handle.net/10344/9979
dc.description peer-reviewed en_US
dc.description.abstract Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on Ti3C2 MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of Ti3C2 MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force microscopy reveals a Schottky barrier height of ∼330 meV between the GaN nanowire and the Ti3C2 MXene film. Our work highlights the potential of using MXene as a transparent and conductive preorienting nucleation layer for high-quality GaN growth on amorphous substrates. en_US
dc.language.iso eng en_US
dc.publisher American Chemical Society en_US
dc.relation.ispartofseries ACS Nano;14 (2), pp. 2202-2211
dc.relation.uri http://dx.doi.org/10.1021/acsnano.9b09126
dc.rights © 2020 ACS This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsnano.9b09126 en_US
dc.subject nanowires en_US
dc.subject MXene en_US
dc.subject molecular beam epitaxy en_US
dc.subject GaN en_US
dc.subject amorphous substrate en_US
dc.title Titanium carbide MXene nucleation layer for epitaxial growth of high-quality GaN nanowires on amorphous substrates en_US
dc.type info:eu-repo/semantics/article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.identifier.doi 10.1021/acsnano.9b09126
dc.contributor.sponsor King Abdulaziz City for Science and Technol ogy (KACST) en_US
dc.relation.projectid KACST TIC R2-FP-008 en_US
dc.relation.projectid C/M-20000-12-001-77 en_US
dc.relation.projectid KCR/1/4055-01-01 en_US
dc.rights.accessrights info:eu-repo/semantics/openAccess en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search ULIR


Browse

My Account

Statistics