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New single photon sources by optoelectronic tailoring of 2D materials using low energy ion implantation

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dc.contributor.author Hennessy, Michael
dc.contributor.author O'Connell, Eoghan
dc.contributor.author Rost, Stefan
dc.contributor.author Auge, Manuel
dc.contributor.author Moynihan, Eoin
dc.contributor.author Bui, Minh
dc.contributor.author Hofsaess, Hans C.
dc.contributor.author Kardynal, Beata
dc.contributor.author Bangert, Ursel
dc.date.accessioned 2020-10-13T13:54:25Z
dc.date.issued 2020
dc.identifier.uri http://hdl.handle.net/10344/9331
dc.description peer-reviewed en_US
dc.description The full text of this article will not be available in ULIR until the embargo expires on the 01/01/2021
dc.description.abstract Monolayer thick transition metal dichalcogenides (TMDCs) with the chemical formula MX2 (M=Mo, W; X=S, Se), constitute a new class of direct bandgap semiconductors. Their remarkable physical properties resulting from their two dimensional (2D) geometry and lattice symmetry make them an exciting platform for developing photonic devices with new functionalities [1]. Monolayer TMDCs can be easily incorporated into electrically driven devices, which in turn can be coupled to optical microcavities or photonic circuits [2]. This work constitutes a proof-of-principle study to incorporate implanted TMDCs into non-classical single photon emitting diodes [3]. The development of such devices has far-reaching implications for emerging technologies such as quantum cryptography and quantum metrology. In order to make such devices a reality, methods of material modification for these materials, such as ultra-low energy (10-25 eV) ion implantation, must be developed [4,5]. Post-growth doping [6] of TMDCs offers an expanded selection of possible dopants compared to the popular method of doping via CVD growth. The technique allows for highly pure, clean and selective substitutional incorporation of dopants [7] and is also compatible with standard semiconductor processing. Ultra-low energy ion implantation is carried out using the ADONIS mass-selected ion beam deposition system at the University of Gottingen [8]. en_US
dc.language.iso eng en_US
dc.publisher Cambridge University Press en_US
dc.relation.ispartofseries Microscopy and Microanalysis;pp.1-2
dc.relation.uri http://dx.doi.org/10.1017/S143192762002293X
dc.rights Material on these pages is copyright Cambridge University Press or reproduced with permission from other copyright owners. It may be downloaded and printed for personal reference, but not otherwise copied, altered in any way or transmitted to others (unless explicitly stated otherwise) without the written permission of Cambridge University Press. Hypertext links to other Web locations are for the convenience of users and do not constitute any endorsement or authorisation by Cambridge University Press. en_US
dc.subject low energy ion implantation en_US
dc.title New single photon sources by optoelectronic tailoring of 2D materials using low energy ion implantation en_US
dc.type info:eu-repo/semantics/conferenceObject en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.identifier.doi 10.1017/S143192762002293X
dc.date.embargoEndDate 2021-01-01
dc.embargo.terms 2021-01-01 en_US
dc.rights.accessrights info:eu-repo/semantics/embargoedAccess en_US


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