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In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applications

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dc.contributor.author Bogan, J.
dc.contributor.author Lundy, Ross
dc.contributor.author McCoy, A.P.
dc.contributor.author O'Connor, R.
dc.contributor.author Byrne, C.
dc.contributor.author Walsh, L.
dc.contributor.author Casey, P.
dc.contributor.author Hughes, G.
dc.date.accessioned 2018-03-15T12:46:40Z
dc.date.available 2018-03-15T12:46:40Z
dc.date.issued 2016
dc.identifier.uri http://hdl.handle.net/10344/6653
dc.description peer-reviewed en_US
dc.description.abstract The surface treatment of ultralow-k dielectric layers by exposure to atomic oxygen is presented as a potential mechanism to modify the chemical composition of the dielectric surface to facilitate copper diffusion barrier layer formation. High carbon content, low-k dielectric films of varying porosity were exposed to atomic oxygen treatments at room temperature, and x-ray photoelectron spectroscopy studies reveal both the depletion of carbon and the incorporation of oxygen at the surface. Subsequent dynamic water contact angle measurements show that the chemically modified surfaces become more hydrophilic after treatment, suggesting that the substrates have become more “SiO2-like” at the near surface region. This treatment is shown to be thermally stable up to 400° C. High resolution electron energy loss spectroscopy elemental profiles confirm the localised removal of carbon from the surface region. Manganese (≈1 nm) was subsequently deposited on the modified substrates and thermally annealed to form surface localized MnSiO3 based barrier layers. The energy-dispersive X-ray spectroscopy elemental maps show that the atomic oxygen treatments facilitate the formation of a continuous manganese silicate barrier within dense low-k films, but significant manganese diffusion is observed in the case of porous substrates, negatively impacting the formation of a discrete barrier layer. Ultimately, the atomic oxygen treatment proves effective in modifying the surface of non-porous dielectrics while continuing to facilitate barrier formation. However, in the case of high porosity films, diffusion of manganese into the bulk film remains a critical issue. en_US
dc.language.iso eng en_US
dc.publisher AIP Publishing en_US
dc.relation.ispartofseries Journal of Applied Physics;120, 105305
dc.relation.uri http://dx.doi.org/10.1063/1.4962371
dc.rights Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics en_US
dc.subject atomic oxygen en_US
dc.subject treatment en_US
dc.title In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applications en_US
dc.type info:eu-repo/semantics/article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.identifier.doi 10.1063/1.4962371
dc.rights.accessrights info:eu-repo/semantics/openAccess en_US


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