University of Limerick Institutional Repository

Thin films of In2O3/SiO for Humidity Sensing Applications

DSpace Repository

Show simple item record Arshak, Khalil Twomey, K. 2017-10-19T12:53:28Z 2017-10-19T12:53:28Z 2002
dc.description peer-reviewed en_US
dc.description.abstract This paper documents the manufacture and testing of a humidity sensor based on a combination of In2O3/SiO. A number of different sensor samples have been produced by thermal deposition and the effect of varying the vacuum pressure has also been investigated. The AC and DC conduction mechanisms have been investigated. From the AC conduction studies, the tunneling conduction mechanism has been observed at low frequencies and the hopping conduction mechanism, for the majority of sensor samples, has been observed at high frequencies. The DC conduction mechanisms have indicated the possibility of spacecharge- limited conduction. The sensor with the highest humidity sensitivity of 1.145%/RH% is 85%In2O3/15%SiO, which is produced at a vacuum pressure of 2×10-4mbar.From the point of view of temperature stability, the 55%In2O3/45%SiO samples produced at a vacuum pressure of 2×10-4 mbar exhibit the lowest temperature sensitivity, 0.3%/°C. en_US
dc.language.iso eng en_US
dc.publisher MDPI en_US
dc.relation.ispartofseries Sensors;2, pp. 205-218
dc.subject thin film sensor en_US
dc.subject AC conduction en_US
dc.subject DC conduction en_US
dc.subject humidity sensitivity en_US
dc.subject temperature sensitivity en_US
dc.title Thin films of In2O3/SiO for Humidity Sensing Applications en_US
dc.type info:eu-repo/semantics/article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.identifier.doi 10.3390/s20600205
dc.rights.accessrights info:eu-repo/semantics/openAccess en_US

Files in this item

This item appears in the following Collection(s)

Show simple item record

Search ULIR


My Account