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Wideband steady-state model of a strained InGaAsP MQW-SOA

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dc.contributor.author Connelly, Michael J.
dc.contributor.author Mazzucato, Simone
dc.contributor.author Carrere, Hélène
dc.contributor.author Amand, Thierry
dc.contributor.author Achouche, Mohand
dc.contributor.author Caillaud, Christopher
dc.contributor.author Brenot, Romain
dc.date.accessioned 2016-10-26T14:40:39Z
dc.date.available 2016-10-26T14:40:39Z
dc.date.issued 2016
dc.identifier.uri http://hdl.handle.net/10344/5302
dc.description peer-reviewed en_US
dc.description.abstract A steady-state model of a strained MQW-SOA is described. Least-squares fitting of the model to experimental polarization resolved amplified spontaneous emission spectra is used to obtain difficult to measure model parameters such as the line-broadening lineshape parameters, Auger recombination, bandgap shrinkage, and intervalence band absorption coefficients. Well capture and escape processes are modeled by a carrier density dependent net escape time which accounts for barrier effects. Simulations and comparisons with experimental data are given which demonstrate the accuracy and versatility of the model. en_US
dc.language.iso eng en_US
dc.publisher Institute of Electrical and Electronics Engineers en_US
dc.relation.ispartofseries Journal of Lightwave Technology;34 (11), pp. 2656-2662
dc.relation.uri http://dx.doi.org/10.1109/JLT.2016.2550183
dc.rights “© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en_US
dc.subject modeling en_US
dc.subject semiconductor optical amplifier en_US
dc.subject quantum-well lasers en_US
dc.subject intraband relaxation en_US
dc.subject numerical-model en_US
dc.subject absorption-spectra en_US
dc.title Wideband steady-state model of a strained InGaAsP MQW-SOA en_US
dc.type info:eu-repo/semantics/article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.date.updated 2016-10-20T12:22:04Z
dc.description.version ACCEPTED
dc.identifier.doi 10.1109/JLT.2016.2550183
dc.rights.accessrights info:eu-repo/semantics/openAccess en_US
dc.internal.rssid 1645837
dc.internal.copyrightchecked Yes
dc.identifier.journaltitle Journal Of Lightwave Technology
dc.description.status peer-reviewed


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