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Solvent vapor growth of axial heterostructure nanowires with multiple alternating segments of silicon and germanium

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dc.contributor.author Flynn, Grace
dc.contributor.author Ramasse, Quentin M.
dc.contributor.author Ryan, Kevin M.
dc.date.accessioned 2016-08-26T08:44:50Z
dc.date.issued 2016
dc.identifier.citation Flynn, G,Ramasse, QM,Ryan, KM (2016) 'Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium'. Nano Letters, 16 :374-380. en_US
dc.identifier.uri http://hdl.handle.net/10344/5155
dc.description peer-reviewed en_US
dc.description Supporting information for this article can be found on second file.
dc.description.abstract Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent in which a tin-coated stainless steel substrate is placed. The Si-Ge transition is obtained by sequential injection with the more difficult Ge-Si transition enabled by inclusion of a quench sequence in the reaction. This approach allows for alternating between pure Si and pure Ge segments along the entire nanowire length with good control of the respective segment dimensions. The multisegment heterostructure nanowires presented are Ge Si, Si Ge Si, Ge-Si-Ge, Si-Ge-Si-Ge, and Si-Ge-Si-Ge-Si-Ge. The interfacial abruptness of the Ge to Si interface is also determined through the use of aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy. en_US
dc.language.iso eng en_US
dc.publisher American Chemical Society en_US
dc.relation.ispartofseries Nano Letters;16, pp. 374-380
dc.relation.uri http://dx.doi.org/10.1021/acs.nanolett.5b03950
dc.rights "© ACM, 2016. This is the author's version of the work. It is posted here by permission of ACM for your personal use. Not for redistribution. The definitive version was published in Nano Letters, 16, pp. 374-380, http://dx.doi.org/10.1021/acs.nanolett.5b03950 en_US
dc.subject germanium en_US
dc.subject axial en_US
dc.subject heterostructure nanowires en_US
dc.subject solvent vapor growth en_US
dc.subject aberration corrected STEM en_US
dc.title Solvent vapor growth of axial heterostructure nanowires with multiple alternating segments of silicon and germanium en_US
dc.type info:eu-repo/semantics/article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.date.updated 2016-08-26T08:34:04Z
dc.description.version ACCEPTED
dc.identifier.doi 10.1021/acs.nanolett.5b03950
dc.contributor.sponsor SFI en_US
dc.contributor.sponsor Intel (Ireland) Ltd en_US
dc.contributor.sponsor IRC en_US
dc.relation.projectid 11P1_1148 en_US
dc.date.embargoEndDate 2016-12-16
dc.embargo.terms 2016-12-16 en_US
dc.rights.accessrights info:eu-repo/semantics/embargoedAccess en_US
dc.internal.rssid 1629116
dc.internal.copyrightchecked Yes
dc.description.status peer-reviewed


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