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Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity

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dc.contributor.author McSweeney, W
dc.contributor.author Lotty, O
dc.contributor.author Mogili, Naga Vishnu V.
dc.contributor.author Glynn, C
dc.contributor.author Geaney, Hugh
dc.contributor.author Tanner, David A.
dc.contributor.author Holmes, Justin D.
dc.contributor.author O'Dwyer, Colm
dc.date.accessioned 2013-12-05T12:13:28Z
dc.date.available 2013-12-05T12:13:28Z
dc.date.issued 2013
dc.identifier.citation McSweeney, W,Lotty, O,Mogili, NVV,Glynn, C,Geaney, H,Tanner, D,Holmes, JD,O'Dwyer, C (2013) 'Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity'. Journal Of Applied Physics, 114 . en_US
dc.identifier.uri http://hdl.handle.net/10344/3496
dc.description peer-reviewed en_US
dc.description.abstract By using Si(100) with different dopant type (n(++)-type (As) or p-type (B)), we show how metal-assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. We used high resolution electron microscopy techniques to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. The n-type NWs have a mesoporosity that is defined by equidistant pores in all directions, and the inter-pore distance is correlated to the effective depletion region width at the reduction potential of the catalyst at the silicon surface in a HF electrolyte. Clumping in n-type MACE Si NWs is also shown to be characteristic of mesoporous NWs when etched as high density NW layers, due to low rigidity (high porosity). Electrical transport investigations show that the etched nanowires exhibit tunable conductance changes, where the largest resistance increase is found for highly mesoporous n-type Si NWs, in spite of their very high electronic carrier concentration. This understanding can be adapted to any low-dimensional semiconducting system capable of selective etching through electroless, and possibly electrochemical, means. The process points to a method of multiscale nanostructuring NWs, from surface roughening of NWs with controllable lengths to defined mesoporosity formation, and may be applicable to applications where high surface area, electrical connectivity, tunable surface structure, and internal porosity are required. (C) 2013 AIP Publishing LLC. en_US
dc.language.iso eng en_US
dc.publisher American Institute of Physics en_US
dc.relation en_US
dc.relation.ispartofseries Journal of Applied Physics;114 (034309)
dc.relation.uri http://link.aip.org/link/doi/10.1063/1.4813867?ver=pdfcov
dc.subject porous silicon en_US
dc.subject crystalline silicon en_US
dc.subject anodic formation en_US
dc.subject arrays en_US
dc.subject growth en_US
dc.subject SI en_US
dc.title Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity en_US
dc.type info:eu-repo/semantics/article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.date.updated 2013-11-29T16:47:57Z
dc.description.version PUBLISHED
dc.contributor.sponsor Irish Government's Programme for Research in Third Level Institutions en_US
dc.contributor.sponsor ERC en_US
dc.contributor.sponsor SFI en_US
dc.contributor.sponsor IRC en_US
dc.relation.projectid SiNAPS 257856 en_US
dc.relation.projectid RS/2011/797 en_US
dc.relation.projectid 07/DK/B1232a en_US
dc.rights.accessrights info:eu-repo/semantics/openAccess en_US
dc.internal.rssid 1444889
dc.internal.copyrightchecked Yes
dc.description.status peer-reviewed


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