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Focused ion beam lithography- overview and new approaches

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dc.contributor.author Arshak, Khalil
dc.contributor.author Mihov, Miroslav
dc.contributor.author Arshak, Arousian
dc.contributor.author McDonagh, Declan
dc.contributor.author Sutton, D
dc.date.accessioned 2012-09-18T14:25:36Z
dc.date.available 2012-09-18T14:25:36Z
dc.date.issued 2004
dc.identifier.uri http://hdl.handle.net/10344/2546
dc.description peer-reviewed en_US
dc.description.abstract Focused Ion Beam (FIB) lithography has significant advantages over the electron beam counterpart in terms of resist sensitivity, backscattering and proximity effects. Applying the Top Surface Imaging (TSI) principal to FIB lithography could further enhance its capability. In this paper we review different FIB lithography processes which utilise both wet and dry development. As of further development of this technology, we report a novel lithography process which combines focused Cia' ion beam (Cia' FIB) exposure, silylation and oxygen dry etching. The Negative Resist Image by D q Etching (NERIME) is a TSI scheme for DNQhovolak based ICS~SIS and can result in either positive or negative resist images depending on the extent of the ion beam exposure dose. The NERlMF process can resolve nanometer resist patterns as small as 30nm yet maintaining high aspect ratio of up to 15. The proposed lithography scheme could be utilised for advanced prototype IC's fabrication and critical CMOS lithography process steps. en_US
dc.language.iso eng en_US
dc.publisher IEEE Computer Society en_US
dc.relation.ispartofseries Microelectronics 2004 International Conference; (2), pp. 459-462
dc.relation.uri http://dx.doi.org/10.1109/ICMEL.2004.1314862
dc.rights “© 2004 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.” en_US
dc.subject cross integrated circuits en_US
dc.subject focused ion beam technology en_US
dc.subject ion beam lithography en_US
dc.subject nanolighography en_US
dc.title Focused ion beam lithography- overview and new approaches en_US
dc.type info:eu-repo/semantics/conferenceObject en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.type.restriction none en
dc.rights.accessrights info:eu-repo/semantics/openAccess en_US


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