Hardcastle, Trevor P.; Hage, Fredrik S.; Gjerding, Morten N.; Kepaptsoglou, Demie M.; Seabourne, Che R.; Winther, Kirsten T.; Zan, Recep; Amani, Julian Alexander; Hofsaess, Hans C.; Bangert, Ursel; Thygesen, Kristian S.; Ramasse, Quentin M.
(ACS Publications, 2018)
Single atom B or N substitutional doping in single-layer suspended graphene,
realised by low energy ion implantation, is shown to induce a dampening or enhancement
of the characteristic interband π plasmon of graphene ...