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Browsing Centres Science and Engineering by Author "Ramasse, Quentin M."

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Browsing Centres Science and Engineering by Author "Ramasse, Quentin M."

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  • Sheehan, Martin; Ramasse, Quentin M.; Geaney, Hugh; Ryan, Kevin M. (Royal Society of Chemistry, 2018)
    Herein, we report a novel approach to form axial heterostructure nanowires composed of linearly distinct Ni silicide (Ni2Si) and Si segments via a one-pot solution synthesis method. Initially, Si nanowires are grown using ...
  • Hardcastle, Trevor P.; Hage, Fredrik S.; Gjerding, Morten N.; Kepaptsoglou, Demie M.; Seabourne, Che R.; Winther, Kirsten T.; Zan, Recep; Amani, Julian Alexander; Hofsaess, Hans C.; Bangert, Ursel; Thygesen, Kristian S.; Ramasse, Quentin M. (ACS Publications, 2018)
    Single atom B or N substitutional doping in single-layer suspended graphene, realised by low energy ion implantation, is shown to induce a dampening or enhancement of the characteristic interband π plasmon of graphene ...
  • Moynihan, Eoin; Rost, Stephan; O'Connell, Eoghan; Ramasse, Quentin M.; Friedrich, Christoph; Bangert, Ursel (Wiley and Sons Ltd, 2020)
    This paper takes a fundamental view of the electron energy loss spectra of monolayer and few layer MoS2. The dielectric function of monolayer MoS2 is compared to the experimental spectra to give clear criteria for the ...
  • Bulushev, Dmitri A.; Zacharska, Monika; Lisitsyn, Alexander S.; Podyacheva, Olga Yu; Hage, Fredrik S.; Ramasse, Quentin M.; Bangert, Ursel; Bulusheva, Lyubov G. (American Chemical Society, 2016)
    Formic acid is a valuable chemical derived from biomass, as it has a high hydrogen-storage capacity and appears to be an attractive source of hydrogen for various applications. Hydrogen production via formic acid decomposition ...
  • Flynn, Grace; Ramasse, Quentin M.; Ryan, Kevin M. (American Chemical Society, 2016)
    Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors ...

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