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Perpendicular growth of catalyst-free germanium nanowire arrays.

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Show simple item record Barrett, Christopher A. Geaney, Hugh Gunning, Robert D. Laffir, Fathima R. Ryan, Kevin M. 2012-02-17T15:33:26Z 2012-02-17T15:33:26Z 2011
dc.description peer-reviewed en_US
dc.description.abstract High yields of single-crystalline Ge nanowires (NWs) were synthesized through the thermal decomposition of diphenylgermane (DPG) in the vapor phase of a high boiling point organic solvent. The NWs were single crystal and ranged from 7 to 15 nm and 0.5-10 μm in diameter and length 10 respectively. Catalyst-free growth only occured in areas exposed to the organic vapor, with no growth occurring in the liquid phase. NW growth was fully localizable to surfaces heated within a critical nucleation temperature range. High density, perpendicular arrays of Ge NWs were subsequently grown from 15 ITO coated substrates. This approach represents a viable and convenient route toward orientated arrays of catalyst-free Ge NWs for high-performance device applications. en_US
dc.language.iso eng en_US
dc.publisher Royal Society of Chemistry en_US
dc.relation.ispartofseries Chemical Communications;47 (13) pp. 3843-3845
dc.subject nanowires en_US
dc.subject perpenidcular growth en_US
dc.title Perpendicular growth of catalyst-free germanium nanowire arrays. en_US
dc.type Article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.type.restriction none en
dc.contributor.sponsor SFI

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