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Modelling and simulations of nanostructures for shipley SPR505A resist using PRIME Process

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dc.contributor.author Arshak, Khalil
dc.contributor.author Mihov, Miroslav
dc.contributor.author Arshak, Arousian
dc.contributor.author McDonagh, Declan
dc.contributor.author Pomeroy, Michael J.
dc.date.accessioned 2011-07-22T12:29:16Z
dc.date.available 2011-07-22T12:29:16Z
dc.date.issued 2001
dc.identifier.uri http://hdl.handle.net/10344/1186
dc.description peer-reviewed
dc.description.abstract The positive resist image by dry etching (PRIME) process is a high resolution lithography system incorporating electron beam exposure, silylation and dry development. The process steps in PRIME with Shipley SPRSOSA resist have been modeled and simulations of nanostructures (50m lines/spaces, 30nm single line) has been presented. The silylation process step in PRIME with SPRS05A resist has been experinientally characterized using FT-IR spectroscopy. en_US
dc.language.iso eng en_US
dc.publisher IEEE Computer Society en_US
dc.relation.ispartofseries Nanotechnology 2001 Proceedings of the 1st IEEE Conference
dc.rights ©2001 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. en_US
dc.subject positive resist image by dry etching
dc.title Modelling and simulations of nanostructures for shipley SPR505A resist using PRIME Process en_US
dc.type Conference item en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.type.restriction none en


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