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Modelling of resolution enhancement processes in lithography

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Show simple item record Arshak, Arousian Arshak, Khalil McDonagh, Declan Mathur, B.P. 2011-07-22T11:54:55Z 2011-07-22T11:54:55Z 1995
dc.description peer-reviewed
dc.description.abstract This paper describes the modelling and simulation of two resolution enhancement techniques in lithography ; 1) phase shift mask (PSM) technology and 2) top surface imaging (TSI) with silylation and dry development. The effect of the duty ratio on the image contrast is computed. Simulated one and two dimensional rim shifters and attenuated PSMs are presented. The effect of the aerial image on the silylation profile for the top imaging processes, DESIRE and PRIME, is also presented. The effect of the first etch step on the final resist profiles is examined. The partial pressure and the presence of magnetic fields are also presented. en_US
dc.language.iso eng en_US
dc.publisher IEEE Computer Society en_US
dc.relation.ispartofseries MIEL- 20th International Conference on Microelectronics
dc.rights ©1995 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. en_US
dc.subject lithography
dc.subject top surface imaging
dc.subject phase shift mask technology
dc.title Modelling of resolution enhancement processes in lithography en_US
dc.type Conference item en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.type.restriction none en

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