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All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier

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dc.contributor.author Guo, Li-Qiang
dc.contributor.author Connelly, Michael J.
dc.date.accessioned 2011-07-19T10:36:52Z
dc.date.available 2011-07-19T10:36:52Z
dc.date.issued 2006
dc.identifier.uri http://hdl.handle.net/10344/1111
dc.description peer-reviewed en_US
dc.description.abstract An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work. en_US
dc.description.sponsorship SFI 02/IN1/I42
dc.language.iso eng en_US
dc.publisher Optical Society of America en_US
dc.relation.ispartofseries Optics Express;14/ 7/ pp. 2938-2943
dc.subject optical logic en_US
dc.subject semiconductor optical amplifiers en_US
dc.title All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier en_US
dc.type Article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.type.restriction none en
dc.internal.rssid 1129285


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