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Top surface imaging lithography processes for I-line resists using liquid-phase silylation

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Show simple item record Arshak, Khalil Arshak, Arousian Mihov, Miroslav McDonagh, Declan 2011-07-01T15:36:54Z 2011-07-01T15:36:54Z 2002
dc.description peer-reviewed
dc.description.abstract In this paper, liquid-phase silylation process for Top Surface Imaging Lithography systems incorporated e-beam exposure has been experimentally investigated using FT-IR spectroscopy, UV spectroscopy, SIM spectrometry and SEM cross-sectionals. The impact of different silylating agents on Shipley SPR505A resist system is presented for both the UV exposed and e-beam crosslinked regions of the resist. Results show that an e-beam dose of 50μC/cm2 at 30KeV is sufficient to crosslink the resist and prevent silylation. The silylation contrast using HMCTS was found to be the highest (11:1) in comparison with other two agents. It was found that the silicon incorporation in SPR505A resist follows Case II diffusion mechanisms. en_US
dc.language.iso eng en_US
dc.publisher IEEE Computer Society en_US
dc.relation.ispartofseries Proceedings 23rd International Conference on Microelectronics (MIEL 2002),
dc.rights ©2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. en_US
dc.subject liquid-phase silylation en_US
dc.title Top surface imaging lithography processes for I-line resists using liquid-phase silylation en_US
dc.type Conference item en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.type.restriction none en

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