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Stretching the equilibrium limit of Sn in Ge1−xSnx nanowires: implications for field effect transistors

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Show simple item record Biswas, Subhajit Doherty, Jessica Galluccio, Emmanuele Manning, Hugh G. Conroy, Michele A. Duffy, Ray Bangert, Ursel Boland, John J. Holme, Justin D. 2021-04-30T10:33:25Z 2021-04-30T10:33:25Z 2021
dc.description peer-reviewed en_US
dc.description.abstract Ge1−xSnx nanowires incorporating a large amount of Sn would be useful for mobility enhancement in nanoelectronic devices, a definitive transition to a direct bandgap for application in optoelectronic devices and to increase the efficiency of the GeSn-based photonic devices. Here we report the catalytic bottom-up fabrication of Ge1−xSnx nanowires with very high Sn incorporation (x > 0.3). These nanowires are grown in supercritical toluene under high pressure (21 MPa). The introduction of high pressure in the vapor−liquid−solid (VLS) like growth regime resulted in a substantial increase of Sn incorporation in the nanowires, with a Sn content ranging between 10 and 35 atom %. The incorporation of Sn in the nanowires was found to be inversely related to nanowire diameter; a high Sn content of 35 atom % was achieved in very thin Ge1−xSnx nanowires with diameters close to 20 nm. Sn was found to be homogeneously distributed throughout the body of the nanowires, without apparent clustering or segregation. The large inclusion of Sn in the nanowires could be attributed to the nanowire growth kinetics and small nanowire diameters, resulting in increased solubility of Sn in Ge at the metastable liquid−solid interface under high pressure. Electrical investigation of the Ge1−xSnx (x = 0.10) nanowires synthesized by the supercritical fluid approach revealed their potential in nanoelectronics and sensor-based applications. en_US
dc.language.iso eng en_US
dc.publisher ACS en_US
dc.relation.ispartofseries Applied Nano Material;4, pp. 1048−1056
dc.subject germanium−tin en_US
dc.subject supercritical fluid en_US
dc.title Stretching the equilibrium limit of Sn in Ge1−xSnx nanowires: implications for field effect transistors en_US
dc.type info:eu-repo/semantics/article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.identifier.doi 10.1021/acsanm.0c02569
dc.contributor.sponsor SFI en_US
dc.contributor.sponsor European Union (EU) en_US
dc.relation.projectid 14/IA/2513 en_US
dc.relation.projectid 16/IA/4462 en_US
dc.relation.projectid 12/RC/2278 en_US
dc.relation.projectid 321160 en_US
dc.rights.accessrights info:eu-repo/semantics/openAccess en_US

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