Wide-band steady-state numerical model and parameter extraction of a tensile-strained bulk semiconductor optical amplifier

dc.contributor.author	Connelly, Michael J.
dc.date.accessioned	2011-07-22T15:23:08Z
dc.date.available	2011-07-22T15:23:08Z
dc.date.issued	2007
dc.identifier.uri	http://hdl.handle.net/10344/1199
dc.description	peer-reviewed	en_US
dc.description.abstract	A wide-band steady-state model of a tensile-strained bulk InGaAsP semiconductor optical amplifier is described. An efficient numerical algorithm of the steady-state model and a parameter extraction algorithm based on the Levenberg–Marquardt method are described. The parameter extraction technique is used to determine the material Auger recombination coefficient, effective intraband lifetime, the average strain and molar fraction of Arsenic in the active region. Simulations and comparisons with experiment are given which demonstrate the accuracy and versatility of the model.	en_US
dc.description.sponsorship	SFI 02/IN1/I42	en_US
dc.language.iso	eng	en_US
dc.publisher	IEEE Computer Society	en_US
dc.relation.ispartofseries	IEEE Journal of Quantum Electronics;43/1/ pp. 47-56
dc.relation.uri	http://dx.doi.org/10.1109/JQE.2006.885205
dc.rights	©2007 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works	en_US
dc.subject	modeling	en_US
dc.subject	parameter extraction	en_US
dc.subject	semiconductor optical amplifier	en_US
dc.subject	tensile-strained bulk material	en_US
dc.title	Wide-band steady-state numerical model and parameter extraction of a tensile-strained bulk semiconductor optical amplifier	en_US
dc.type	Article	en_US
dc.type.supercollection	all_ul_research	en_US
dc.type.supercollection	ul_published_reviewed	en_US
dc.type.restriction	none	en