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A Mueller-matrix formalism for modeling polarization azimuth and ellipticity angle in semiconductor optical amplifiers in a pump–probe scheme

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dc.contributor.author Guo, Li-Qiang
dc.contributor.author Connelly, Michael J.
dc.date.accessioned 2011-07-21T11:49:22Z
dc.date.available 2011-07-21T11:49:22Z
dc.date.issued 2007
dc.identifier.uri http://hdl.handle.net/10344/1158
dc.description peer-reviewed en_US
dc.description.abstract This paper presents a Mueller-matrix approach to simulate the azimuth and ellipticity trajectory of a probe light in a tensile-strained bulk semiconductor optical amplifier (SOA) in a conventional pump–probe scheme. The physical mechanisms for the variations of polarization azimuth and ellipticity angle of the probe originate from the significant nonuniform distributions of carrier density across the active region in the presence of an intense pump light. Due to this carrier-density nonuniformity, the effective refractive indexes experienced by transverse-electric (TE) and transverse-magnetic (TM) modes of the probe are different. This results in a phase shift between TE and TM modes of the probe upon leaving the SOA. Simulations of the carrier distributions along the cavity length at different pump-light levels are demonstrated using multisection rate equations, which take into account the longitudinal nonuniform carrier density. The optical gain is considered via the parabolic band approximation. The influences of the spontaneous recombination and carrierdependent material loss on the amplifier performance are included. The Mueller-matrix formalism is utilized to predict the variations of azimuth and ellipticity angle, which greatly reduces the complexity of the simulations in comparison with Jones-matrix formalism. The suggested approach is beneficial to experimental investigations due to the fact that during the optical-tuning process, Stokes parameters are virtually measurable on the Poincaré sphere, and the Stokes vector of the incoming probe can be adjusted by a polarization controller and monitored by a polarization analyzer. Based on these carrier-induced nonlinearities in SOAs, an optical AND gate with extinction ratio larger than 14 dB and Q-factor larger than 25 is presented at a bit rate of 2.5 Gb/s. en_US
dc.description.sponsorship SFI 02/IN1/I42 en_US
dc.language.iso eng en_US
dc.publisher IEEE Computer Society en_US
dc.relation.ispartofseries Journal of Lightwave Technology;25/ 1/ pp.410-420
dc.rights ©2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. en_US
dc.subject azimuth en_US
dc.subject ellipticity en_US
dc.subject Mueller matrix en_US
dc.subject semiconductor optical amplifier en_US
dc.subject Stokes parameters en_US
dc.title A Mueller-matrix formalism for modeling polarization azimuth and ellipticity angle in semiconductor optical amplifiers in a pump–probe scheme en_US
dc.type Article en_US
dc.type.supercollection all_ul_research en_US
dc.type.supercollection ul_published_reviewed en_US
dc.type.restriction none en
dc.internal.rssid 1118962
dc.internal.rssid 1129278

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