Patterning nanometer resist features on planar & topography substrates using the 2-step NERIME FIB top surface imaging process

dc.contributor.author	Arshak, Khalil
dc.contributor.author	Gilmartin, Stephen L.
dc.contributor.author	Arshak, Arousian
dc.contributor.author	Collins, Damien
dc.contributor.author	Korostynska, Olga
dc.date.accessioned	2011-07-20T12:40:10Z
dc.date.available	2011-07-20T12:40:10Z
dc.date.issued	2005
dc.identifier.uri	http://hdl.handle.net/10344/1130
dc.description	peer-reviewed
dc.description.abstract	The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process has been previously reported as an excellent technique for patterning nanometer scale features in DNQ/novolak based photoresists on silicon substrates. In this paper we demonstrate that the 2-step NERIME process can be used to pattern nanometer scale resist features on different substrate materials and topography substrates.	en_US
dc.language.iso	eng	en_US
dc.publisher	IEEE Computer Society	en_US
dc.relation.ispartofseries	ICMENS’05 Proceedings of the 2005 International Conference on MEMS, NANO and Smart Systems
dc.rights	©2005 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.	en_US
dc.subject	focused ion beam
dc.subject	top surface imaging
dc.title	Patterning nanometer resist features on planar & topography substrates using the 2-step NERIME FIB top surface imaging process	en_US
dc.type	Conference item	en_US
dc.type.supercollection	all_ul_research	en_US
dc.type.supercollection	ul_published_reviewed	en_US
dc.type.restriction	none	en