All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier

dc.contributor.author	Guo, Li-Qiang
dc.contributor.author	Connelly, Michael J.
dc.date.accessioned	2011-07-19T10:36:52Z
dc.date.available	2011-07-19T10:36:52Z
dc.date.issued	2006
dc.identifier.uri	http://hdl.handle.net/10344/1111
dc.description	peer-reviewed	en_US
dc.description.abstract	An all-optical AND gate based on optically induced nonlinear polarization rotation of a probe light in a bulk semiconductor optical amplifier is realized at a bit rate of 2.5Gbit/s. By operating the AND gate in an up and inverted wavelength conversion scheme, the extinction ratio is improved by 8dB compared with previously published work.	en_US
dc.description.sponsorship	SFI 02/IN1/I42
dc.language.iso	eng	en_US
dc.publisher	Optical Society of America	en_US
dc.relation.ispartofseries	Optics Express;14/ 7/ pp. 2938-2943
dc.subject	optical logic	en_US
dc.subject	semiconductor optical amplifiers	en_US
dc.title	All-optical AND gate with improved extinction ratio using signal induced nonlinearities in a bulk semiconductor optical amplifier	en_US
dc.type	Article	en_US
dc.type.supercollection	all_ul_research	en_US
dc.type.supercollection	ul_published_reviewed	en_US
dc.type.restriction	none	en